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| 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGX75L60A 600 Volts 75 Amps 1.8 Volts vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features * * * * * * * Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAGX75L60B low VCE(sat) IGBT, low conduction losses Maximum Ratings @ 25C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ 25C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg JC MAX. 600 600 +/-20 +/-30 75 60 200 100 300 -55 to +150 -55 to +150 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps Watts C C C/W Collector-to-Gate Breakdown Voltage @ TJ 25C, RGS= 1 M Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25C Tj= 90C Peak Collector Current, pulse width limited by Tjmax, Safe Operating Area (RBSOA) @ VGE= 15V, L= 30H (clamped inductive load), R G= 2.7, Tj= 125C, VCE= 0.8 x V CES Power Dissipation Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case Mechanical Outline COLLECTOR GATE EMITTER Datasheet# MSC0297A MSAGX75L60A Electrical Parameters @ 25C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) Gate Threshold Voltage Gate-to-Emitter Leakage Current Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) Collector-to-Emitter Saturation Voltage (1) Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance INDUCTIVE LOAD, Tj= 25C Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Off Energy INDUCTIVE LOAD, Tj= 125C Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector (Miller) Charge SYMBOL BVCES VGE(th) IGES ICES VCE(sat) gfs Cies Coes Cres td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Qg Qge Qgc CONDITIONS VGS = 0 V, I C = 250 A VCE = VGE, IC = 250 A VGE = 20V DC, VCE = 0 VCE =0.8*BVCES VGE = 0 V VGE= 15V, I C= 60A I C= 60A VCE 10 V; I C = 60 A MIN 600 2.5 TYP. MAX 5.0 100 200 200 1000 1.8 UNIT V V nA A V S pF T J = 25C T J = 125C TJ = 25C T J = 125C T J = 25C T J = 125C 30 1.8 40 4000 340 100 50 210 600 500 16 50 240 3 1000 1000 26 200 35 80 VGE = 0 V, V CE = 25 V, f = 1 MHz VGE = 15 V, V CE = 480 V, IC = 60 A, R G = 2.7 , L= 100 H note 2, 3 800 700 ns ns ns ns mJ ns ns mJ ns ns mJ nC VGE = 15 V, V CE = 480 V, IC = 60 A, R G = 2.7 , L= 100 H note 2, 3 VGE = 15 V, V CE = 300V, I C = 50A 250 50 100 Notes (1) (2) (3) (4) Pulse test, t 300 s, duty cycle 2% switching times and losses may increase for larger V CE and/or R G values or higher junction temperatures. switching losses include "tail" losses Microsemi Corp. does not manufacture the igbt die; contact company for details. |
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